Description
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Capacity: 8GB (1G x 64-bit)
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Type: DDR3L SDRAM, SODIMM (204-pin)
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Data Rate: DDR3-1600 (PC3-12800)
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Rank/Organization: 2Rx8 (dual rank, 8-bit wide)
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Chip configuration: Sixteen 512M x 8-bit FBGA components
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Contact: Gold fingers
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Standard: JEDEC-compliant
Features
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Operates at 1.35V (low voltage) or 1.5V
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VDDQ: 1.35V / 1.5V
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Frequency: 800 MHz (effective 1600 MT/s per pin)
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CAS Latency (CL): Programmable 5–11 (JEDEC standard CL11 at 1600)
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Additive Latency: 0, CL–2, or CL–1 clock
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Burst Length: 8 (interleaved unlimited, sequential with address "000"), 4 with tCCD=4
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Prefetch: 8-bit
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Data strobe: Bi-directional differential
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Calibration: Internal ZQ self-calibration (RZQ = 240Ω ±1%)
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On-Die Termination (ODT): Supported
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Refresh:
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7.8 µs (Tcase ≤ 85 °C)
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3.9 µs (85 °C < Tcase < 95 °C)
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Reset: Asynchronous reset supported
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PCB height: 30 mm (1.18”), double-sided
Specifications
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CL (IDD): 11 cycles
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tRC (Row Cycle Time): ≥ 48.125 ns
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tRFC (Refresh to Active/Refresh Command Time): ≥ 260 ns
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tRAS (Row Active Time): ≥ 35 ns
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UL Rating: 94 V-0
Operating Conditions
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Operating temperature: 0 °C to 85 °C
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Storage temperature: –55 °C to +100 °C
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